Prof. Frank Schwierz received the Dr.-Ing. and Dr. habil. degrees from Technische Universität (TU) Ilmenau, Germany, in 1986 and 2003, respectively. Presently he serves as Privatdozent at TU Ilmenau and is Head of the RF & Nano Device Research Group. His research interests include semiconductor device physics and novel device and material concepts for future transistor generations.

Dr. Schwierz is conducting research projects funded by the European Community, German government agencies, and the industry. Together with partners from academia and industry he was involved in the development of the fastest Si-based transistors worldwide in the late 1990s, of Europe's smallest MOSFETs in the early 2000s, and of the fastest GaN HEMTs on Si and the fastest GaN tri-gate HEMTs worldwide in the 2010s. His recent work on two-dimensional materials made a major contribution to the current understanding of the merits and drawbacks of graphene and 2D-beyond-graphene transistors.

Dr. Schwierz has published more than 265 journal and conference papers including more than 45 invited papers. He is author of the books Modern Microwave Transistors – Theory, Design, and Performance (J. Wiley & Sons 2003) and Nanometer CMOS (Pan Stanford Publishing 2010) and editor of the book Two-Dimensional Electronics – Prospects and Challenges (MDPI 2016).

 Dr. Schwierz is Senior Member of the IEEE. He serves as a Distinguished Lecturer of the IEEE Electron Devices Society and as an editor of the IEEE Transactions on Electron Devices. Moreover, he contributed to the Emerging Research Devices Chapters of the 2013 and 2015 ITRS (International Technology Roadmap for Semiconductors) editions and is currently contributing to the Heterogeneous Integration Roadmap.