EDUCATION, RESEARCH AND TEACHING EXPERIENCE
1982 Diplom-Ingenieur
1986 Ph.D. (Dr.-Ing.) Electron Devices, Thesis: Modeling and Design of GaAs MESFETs
1986 - 1992 Head of the GaAs Research Group at TU Ilmenau
1992 - Head of the RF & Nano Devices Research Group at TU Ilmenau
1996 - 2001 Member of the IEEE
2001 - Senior Member of the IEEE
2004 Habilitation (Dr.-Ing. habil.) Semiconductor Electronics, Thesis: Modern Microwave Transistors – Theory, Design, and Performance. Published by J. Wiley & Sons (2003).
2004 Venia legendi, Privatdozent Semiconductor Electronics
Teaching Courses in Microelectronic Devices, GHz and THz Electronics, Nanoelectronics, Optoelectronic Sensors and Receivers
Research Main Fields of Interest: Novel Transistor Concepts for Future Electronics, Ultra-High- Speed Transistors, Two-Dimensional Materials for Electronic Devices
Ongoing and Recently Completed Funded Research Projects
ULTIMOS2 – Ultimate Scaling and Performance Potential of MoS2 MOSFETs (ongoing)
2D-Sens – Ultrasensitive Energy-Efficient Gas Sensors Made of 2D Materials (ongoing)
GaN Tri-Gate HEMTs (German Research Foundation)
- Graphene Nanoribbon Transistors (German Research Foundation)
- 2D Electronics (University Excellence Research Grant)
- Si Nanowire MOSFETs (German Research Foundation)
- HEMT Compact Modeling (European Community)
- High-Speed Si LDMOSFETs (Industry)
Publications 3 Books, 3 Book Chapters
> 270 Journal and Conference Papers (> 50 Keynote / Invited Papers at International Conferences)
FURTHER PROFESSIONAL ACTIVITIES
- Guest Editor of the Special Issue 2D Materials for Electronic, Optoelectronic, and Sensor Devices, IEEE Trans. Electron Devices, Oct. 2018.
- Distinguished Lecturer of the IEEE Electron Devices Society (since 2016).
- Editor of IEEE Transactions on Electron Devices (since 2016).
- Electron Devices Society representative of the IEEE region 8 Chapter Coordination Committee (20132017).
- Panel Member of the Panel Discussion at IEDM 2015 Emerging Devices – Will they solve the bottlenecks of CMOS?
- Key contributor to the Emerging Research Devices Technology Working Group of the 2013 and 2015 ITRS (International Technology Roadmap for Semiconductors) editions.
- Guest Editor of the Special Issue TwoDimensional Electronics Prospects and Challenges, Electronics 2015.
- Editor of Journal of Electrical Engineering since 2012.
- Reviewer for Scientific Journals, such as Nature, Nat. Nanotechnol., Nat. Mater., Nat. Commun., Nat. Phys., Nano Lett., ACS Nano, IEEE TED, IEEE EDL, Appl. Phys. Lett., J. Appl. Phys., etc.
- 60 Invited Lectures and 3 Short Courses at Universities and Industry Labs worldwide.
- Member of International Conference Committees including IEDM.
SELECTED PUBLICATIONS (FROM A TOTAL OF > 270 JOURNAL AND CONFERENCE PAPERS)
· S. Thiele, …, and F. Schwierz, The prospects of transition metal dichalcogenides for ultimately scaled CMOS, Solid-State Electron. 143, 2-9 (2018).
· E. Ture, …, F. Schwierz, …, First demonstration of W-Band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power, Proc. IEEE MTT-S International Microwave Symposium (IMS), 35-37, (2017).
· Z. Geng, …, and F. Schwierz, Graphene nanoribbons for electronic devices, Ann. Phys. 529, 1700033 (2017).
· C. Nanmeni Bondja, …, and F. Schwierz, Simulation of 50-nm gate graphene nanoribbon transistors, Electronics 5, 3 (2016).
· F. Schwierz, …, and R. Granzner, Two-dimensional materials and their prospects in transistor electronics, Nanoscale 7, 8261-8283 (2015).
· F. Schwierz, Graphene electronics, In: A. Chen, J. Hutchby, V. Zhirnov, and G. Bourianoff (eds.), Emerging nanoelectronic devices, J. Wiley & Sons (2015).
· W. Jatal, … F. Schwierz, …, High frequency performance of GaN HEMTs on 3C-SiC/Si substrates with Au- Free ohmic contacts, IEEE Electron Device Lett. 36, 123-125, (2015).
· M. C. Lemme, L. Li, T. Palacios, and F. Schwierz, Two-dimensional materials for electronic applications: Opportunities and challenges, Invited paper, MRS Bulletin 39, 711-718 (2014).
· F. Schwierz, Graphene Transistors: Status, Prospects, and Problems, Invited Paper, Proc. IEEE 101, 1567- 1584 (2013).
· B. Hähnlein, …, and F. Schwierz, Side-gate graphene field-effect transistors with high transconductance, Appl. Phys. Lett. 101, 093504 (2012).
· F. Schwierz, Industry-compatible graphene transistors, Nature 472, 41-42 (2011).
· F. Schwierz, Flat transistors get off the ground, Nature Nanotechnology 6, 135-136 (2011).
· F. Schwierz, Graphene Transistors, Nature Nanotechnology 5, pp. 487-496 (2010).
· F. Schwierz, H. Wong, and J. J. Liou, Nanometer CMOS, World Scientific & Pan Stanford Publishing, Singapore 2010.
· F. Schwierz and J. J. Liou, Modern Microwave Transistors - Theory, Design, and Performance, John Wiley& Sons, New York 2003.